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| CMPT6428 CMPT6429 NPN SILICON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. SOT-23 CASE The CENTRAL SEMICONDUCTOR CMPT6428, CMPT6429 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high gain amplifier applications. Marking Codes are C1K and C1L Respectively. MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA CMPT6428 60 50 CMPT6429 55 45 6.0 200 350 UNITS V V V mA mW oC oC/W -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) CMPT6428 TEST CONDITIONS MIN MAX VCB=30V 10 VCE=30V 100 VBE=5.0V 10 IC=100A 60 IC=1.0mA 50 IC=10mA, IB=0.5mA 0.20 IC=100mA, IB=5.0mA 0.60 VCE=5.0V, IC=1.0mA 0.56 0.66 VCE=5.0V, IC=10A 250 VCE=5.0V, IC=100A 250 650 VCE=5.0V, IC=1.0mA 250 VCE=5.0V, IC=10mA 250 VCE=5.0V, IC=1.0mA, f=100MHz 100 700 CMPT6429 MIN MAX 10 100 10 55 45 0.20 0.60 0.56 0.66 500 500 1250 500 500 100 700 SYMBOL ICBO ICEO IEBO BVCBO BVCEO VCE(SAT) VCE(SAT) VBE(ON) hFE hFE hFE hFE fT UNITS nA nA nA V V V V V MHz 190 SYMBOL Cob Cib TEST CONDITIONS VCB=10V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz CMPT6428 MIN MAX 3.0 8.0 CMPT6429 MIN MAX 3.0 8.0 UNITS pF pF All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 191 |
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